Amorphous silicon phototransistors
作者:
Yoshiyuki Kaneko,
Norio Koike,
Ken Tsutsui,
Toshihisa Tsukada,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 7
页码: 650-652
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102726
出版商: AIP
数据来源: AIP
摘要:
An amorphous silicon field‐effect phototransistor is fabricated using a processing technology compatible with conventional amorphous silicon‐silicon nitride thin‐film transistors. The phototransistor has an offset structure between the source and gate electrodes, where light is absorbed to produce a photocurrent. In an electron accumulation mode, the photocurrent is greater than the dark current by three orders of magnitude. In addition, the phototransistor is found to have output characteristics showing good saturation. Typical photoconductive gain of this saturation current is 17.
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