Picosecond GaAs‐based photoconductive optoelectronic detectors
作者:
F. W. Smith,
H. Q. Le,
V. Diadiuk,
M. A. Hollis,
A. R. Calawa,
S. Gupta,
M. Frankel,
D. R. Dykaar,
G. A. Mourou,
T. Y. Hsiang,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 10
页码: 890-892
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100800
出版商: AIP
数据来源: AIP
摘要:
A novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4beam fluxes has been used as the active layer for a high‐speed photoconductive optoelectronic switch. The high‐speed photoconductive performance of the material was assessed by fabricating two devices: an Auston switch and a photoconductive‐gap switch with a coplanar transmission line. In a coplanar transmission line configuration, the speed of response is 1.6 ps (full width at half maximum) and the response is 10 to 100 times greater than that of conventional photoconductive switches. Since the material is compatible with GaAs discrete device and integrated circuit technologies, this photoconductive switch may find extensive applications for high‐speed device and circuit testing.
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