High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+&dgr;Ga0.5−&dgr;P active layer
作者:
K. Nitta,
K. Itaya,
Y. Nishikawa,
M. Ishikawa,
M. Okajima,
G. Hatakoshi,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 2
页码: 149-151
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106002
出版商: AIP
数据来源: AIP
摘要:
High‐power and high‐reliable operation of transverse‐mode stabilized InGaAlP laser diodes has been achieved by a selectively buried ridge waveguide structure with a thin (0.02 &mgr;m) active layer. A composition‐shifted In0.5+&dgr;Ga0.5−&dgr;P active layer was employed in order to improve the temperature characteristic. A maximum cw light output power of 54 mW was obtained for the laser with antireflection and high‐reflection coatings. A high‐power cw operation above 30 mW output power was maintained even at a 60 °C heat‐sink temperature. Stable cw operation exceeding 1000 h has been achieved for 20 mW output power at 50 °C.
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