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Quantum noise effects in tunnel junctions in the 0–1‐mV bias range

 

作者: A. van der Ziel,  

 

期刊: Journal of Applied Physics  (AIP Available online 1980)
卷期: Volume 51, issue 4  

页码: 2292-2293

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327864

 

出版商: AIP

 

数据来源: AIP

 

摘要:

According to Tucker’s theory of the admittance and the noise of tunnel junctions there should be interesting quantum effects around 1011Hz, 2 °K, and a 0–1‐mV bias range. These effects are evaluated in detail for a metal‐oxide‐metal tunnel diode. The results apply equally top‐ntunnel junctions. The effects appear to be measurable.

 

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