A model is presented for calculating the incorporation probability and steady state depth distribution of accelerated dopants in films deposited from the vapor phase. Terms accounting for thermal sticking probabilities, low‐energy implantation, diffusion, surface segregation, and preferential sputtering are included. Model predictions are shown to be in good agreement with Ota’s experimental data [J. Appl. Phys.51, 1102 (1980)] for the incorporation probability of As, as a function of film‐growth temperature and As acceleration energy, in Si films grown by molecular beam epitaxy.