A new method is proposed which gives the initial and final steady‐state densities and the generation‐annealing kinetic rates of each interface state and oxide trap species. The number of stress‐anneal cycles required to give deterministic values of the rates is equal to the number of interface or oxide traps. An implementation example is given on the post‐irradiation room‐temperature annealing of the two interface and two oxide traps in a silicon metal‐oxide‐semiconductor capacitor. Accurate relative hydrogen concentration can also be determined at atomic hydrogen densities as low as 106atoms/cm3.