We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface‐emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular‐beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105W/cm2, a 34‐nm longitudinal mode spacing, and a 2.3‐nm peak width of the laser emission were observed for the 6‐&mgr;m‐thick multilayer.