Three‐terminal delta‐doped barrier switching device with S‐shaped negative differential resistance
作者:
J. N. Baillargeon,
K. Y. Cheng,
J. Laskar,
J. Kolodzey,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 7
页码: 663-665
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101815
出版商: AIP
数据来源: AIP
摘要:
A molecular beam epitaxial grown GaAs three‐terminal device with a delta‐doped barrier and GaInAs quantum well exhibiting controllable S‐shaped negative differential resistance and switching voltages has been fabricated and tested. The device has a large potential barrier between the anode and cathode regions which can be modulated via a third terminal. The modulation of the potential barrier has a substantial effect on the switching behavior of the device. For the devices having a cathode contact area of 50 &mgr;m2, a spectrum analyzer reveals unstable oscillation up to the system measurement limit of 21 GHz. The output power signal for the best device is greater than −10 dBm which is 20 dB above the noise floor at 20.8 GHz. The results show this device to be a potentially useful and promising high‐frequency oscillator.
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