Instability mechanism in hydrogenated amorphous silicon thin‐film transistors
作者:
R. E. I. Schropp,
J. F. Verwey,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 4
页码: 185-187
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97656
出版商: AIP
数据来源: AIP
摘要:
The degradation of hydrogenated amorphous silicon under an applied field is studied in an amorphous silicon thin‐film transistor. A possible mechanism for metastable defect creation due to trapping of electrons at weak bonds together with a bond‐switching event is investigated. The energy for the bond‐switching process is assumed to be supplied thermally. The rate equation is set up and it is shown that this new model for defect creation is capable of describing the experimentally observed slow field‐effect current transients at various temperatures.
点击下载:
PDF
(315KB)
返 回