This paper reports new experimental results on the measurements of oxygen and carbon in silicon.18O and13C in‐depth distribution has been measured in silicon as a function of postimplant furnace and laser annealing using secondary ion mass spectroscopy. Analysis shows that a complicated structure appears in the18O atomic profile following 900–1100 °C furnace annealing. The18O redistribution is substantially caused by implantation‐induced damage gettering of18O in silicon. Because of a fast annihilation of displacement damages by laser annealing, any complicated redistribution was not observed in the laser‐annealed18O atomic profile. No such structure was observed in the furnace‐ and laser‐annealed13C atomic profiles, implying some differences in the atomic behavior of carbon and oxygen in silicon.