Er3+-related electroluminescence (EL) at ∼1.54 &mgr;m from single-crystal silicon light-emitting diodes fabricated by erbium and oxygen co-implantation and subsequent annealing has been observed in the avalanche breakdown regime in the 80–300 K temperature range. The EL intensity decreased by a factor of 2 with a temperature increase from 80 to 300 K. The room-temperature yield under the reverse bias was over one order of magnitude higher than that under the forward bias. ©1997 American Institute of Physics.