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Space Charge in Semiconductors Resulting from Low Level Injection

 

作者: Milton Green,  

 

期刊: Journal of Applied Physics  (AIP Available online 1959)
卷期: Volume 30, issue 5  

页码: 744-747

 

ISSN:0021-8979

 

年代: 1959

 

DOI:10.1063/1.1735225

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A solution of the continuity equations is obtained for the space charge distribution by assuming (1) that deviations from neutrality are small, and (2) that the space charge fields, which are a consequence of the terms containing ▿·Ein these equations give rise to pure diffusion and pure ``drift‐wave'' terms with time dependent coefficients. It is, for equal numbers of holes and electrons initially injected,e[(p−p0)−(n−n0)]=−&tgr;&rgr;∇E·J[1−exp(−t/&tgr;&rgr;)], where &tgr;&rgr;equalsK/4&pgr;&sgr;, the relaxation time,Jis the total current density including diffusion, as well as drift, and∇Emeans that the divergence does not operate onE(the electric field is held constant). In the differentiation ∂n/∂xand ∂p/∂xare considered to be equal, as are ∂2n/∂x2and ∂2p/∂x2.Working independently, H. Brooks and W. van Roosbroeck arrived at expressions for both the ambipolar diffusion coefficient and the ``group mobility'' of the drift of a pulse of excess carriers. This theory yields the same results, and, in addition, transient expressions are gotten for each.

 

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