首页   按字顺浏览 期刊浏览 卷期浏览 Electrical activation processes of p+ions channeled along the [110] axis of silicon: Ef...
Electrical activation processes of p+ions channeled along the [110] axis of silicon: Effect of annealing on carriers profiles shape

 

作者: F. Cembali,   R. Galloni,   F. Zignani,  

 

期刊: Radiation Effects  （Taylor Available online 1975）
卷期: Volume 26, issue 3  

页码: 161-171

 

ISSN:0033-7579

 

年代: 1975

 

DOI:10.1080/00337577508234746

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Phosphorus ions at energies of 100, 200 and 300 keV and doses : etween 5 × 1014and 5 × 1015at/cm2have been implanted into silicon crystals along the [110] axis.

 

点击下载:  PDF (608KB)



返 回