Response to ‘‘Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’ ’’ [Appl. Phys. Lett.54, 398 (1989)]

 

作者: W. B. Jackson,   C. C. Tsai,   M. Stutzmann,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 4  

页码: 399-400

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.100975

 

出版商: AIP

 

数据来源: AIP

 

 

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