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Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110)

 

作者: Perry Skeath,   I. Lindau,   P. W. Chye,   C. Y. Su,   W. E. Spicer,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1979）
卷期: Volume 16, issue 5  

页码: 1143-1148

 

ISSN:0022-5355

 

年代: 1979

 

DOI:10.1116/1.570178

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;METALS;SCHOTTKY BARRIER DIODES;BAND THEORY;CRYSTAL DEFECTS;SURFACES;FERMI LEVEL;PHOTOEMISSION;X RADIATION;ULTRAVIOLET RADIATION;ULTRAHIGH VACUUM;ALUMINIUM;INDIUM;GALLIUM

 

数据来源: AIP

 

摘要:

New evidence for a defect mechanism which is responsible for pinning states within the band gap on the (110) surfaces of the III–V compounds is presented. Investigations of column III metals on bothn‐ andp‐type GaAs revealed a systematic difference in surface Fermi energy stabilization in the gap withp‐type samples pinning 0.25 eV belown‐type samples. Several current models and theories of Schottky barriers are discussed in terms of both the results given in this paper and previously reported data.

 

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