The technique of high‐temperature cheap thermal resistor fabrication, based on polycrystal and fast neutron irradiated silicon carbide single crystals, is presented. The operating temperature range is 20–600 °C for polycrystal devices and 200–800 °C for single crystal devices and coefficientBin the expressionR=R0 exp(B/T) is equal to 4500 and 10 000, respectively. ©1996 American Institute of Physics.