Self‐compensation through a large lattice relaxation inp‐type ZnSe
作者:
D. J. Chadi,
K. J. Chang,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 6
页码: 575-577
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101837
出版商: AIP
数据来源: AIP
摘要:
The energetics of self‐compensation through atomic relaxation around acceptor impurities in ZnSe were examined via first principles total energy calculations. We find large charge state and impurity‐dependent lattice relaxations for As and P acceptors which can account for the experimentally observed difficulties in obtaining low‐resistivityp‐type ZnSe from these dopants. A much smaller relaxation is found for Li.
点击下载:
PDF
(374KB)
返 回