A novel misalignment offset reduction technique is extended in order to separate a piezoresistive voltage, from the Hall voltage, in doubly connected Hall elements based on silicon. In a special configuration, this method exploits directional averaging using biaxial current injection from four electrically separate current sources in order to cancelinsituthe stress‐generated off‐diagonal piezoresistive voltage across the Hall voltage contacts. Measurements suggest field‐equivalent offsets below 1 mT in (001) surfacen‐Si devices with current injection in the [110] direction. ©1995 American Institute of Physics.