Plasma process induced surface damage removal
作者:
C. B. Brooks,
M. J. Buie,
K. J. Vaidya,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 260-264
ISSN:0734-2101
年代: 1998
DOI:10.1116/1.580980
出版商: American Vacuum Society
数据来源: AIP
摘要:
As device geometries continue to shrink below 0.5μm, previously acceptable levels of silicon contamination and lattice damage from energetic ion bombardment in reactive ion etchers are beginning to affect device performance and reliability through increased junction leakage and higher contact resistance. The Applied Materials remote plasma source (RPS), an isotropic chemical downstream etcher, was used to remove surface residues, impurity penetration, and silicon lattice damage to recover a device quality surface. Several diagnostic methods, including transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy, are used to investigate the effectiveness of a controlled silicon etch process in the RPS chamber.
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