A method for the preparation of lamellae of Si and CoSi2using thin‐film eutectic solidification techniques is presented. In the experiment, a laser was used to melt and directionally solidify an alloyed film of Co and polycrystalline Si on a thermally oxidized Si wafer. Using traverse rates as rapid as 8 cm/s, 50‐nm‐wide CoSi2stripes, separated by comparable amounts of Si are obtained. An analysis of the chemistry and microstructure of the film before and after laser scanning is discussed.