The film resistance has been monitored during the deposition of gold onto glass at room temperature in UHV. The film structure during the growth could be related to the depositing resistance and to the resistance during aging after halts in the deposition. In the discontinuous stage the tunneling length of electrons increases exponentially with aging times larger than 2 h. The electric‐field‐dependent resistance was measured 20 h after deposition. An Ohmic region at low fields was followed by a region proportional to the square root of the applied field.