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Radiation processing of Cr‐GaAs contacts

 

作者: J. Breza,   M. Kadlecˇi´kova´,   R. V. Konakova,   V. G. Lyapin,   V. V. Milenin,   V. A. Statov,   Yu. A. Tkhorik,   M. Yu. Filatov,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 10  

页码: 1462-1464

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114495

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on the influence of60Co gamma‐radiation upon the properties of Cr‐GaAs diode structures. Auger depth profiling proved that while a low dose of radiation made the transition region wider, higher doses caused its narrowing. Radiation treatment affected the Schottky barrier height and ideality factor favourably. ©1995 American Institute of Physics.

 

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