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Polycrystalline GaInAs/AlInAs films for photoconductive detectors

 

作者: C. E. C. Wood,   W. J. Johnson,   P. S. Cho,   C. H. Lee,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 11  

页码: 1588-1590

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114948

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We show that thin Al0.48In0.52As layers in Ga0.47In0.53As alloy films, can be used to trap free carriers, and produce high resistivity materials suitable for 1.55 &mgr;m photoconductive detectors. ©1995 American Institute of Physics.

 

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