Electrical characterization of AlxGa1−xAs grown by low‐pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor
作者:
Nicholas G. Paraskevopoulos,
Sigrid R. McAfee,
William S. Hobson,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 2
页码: 183-185
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113128
出版商: AIP
数据来源: AIP
摘要:
The electrical properties of AlxGa1−xAs (0≤x≤0.44) grown by organometallic vapor phase epitaxy using trimethylamine alane as the Al precursor were investigated. High‐quality AlGaAs Schottky barriers were fabricated and characterized by current–voltage, capacitance–voltage, and deep level transient spectroscopy measurements. The epilayers showed excellent electrical characteristics with low overall trap concentrations. In particular, the AlxGa1−xAs layers contained very low concentrations of EL2. ©1995 American Institute of Physics.
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