首页   按字顺浏览 期刊浏览 卷期浏览 Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar trans...
Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

 

作者: D. Ritter,   R. A. Hamm,   A. Feygenson,   M. B. Panish,   S. Chandrasekhar,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 26  

页码: 3431-3433

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105698

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The common emitter current gain of InP/Ga0.47In0.53As heterojunction bipolar transitors having a base doping level of 7×1019cm−3is found to increase monotonically with decreasing base thickness in the range of 200–1000 A˚. The variation of the gain with base thicknessWBis proportional to 1×W2B, as expected for diffusive base transport, and a high injection efficiency.

 

点击下载:  PDF (368KB)



返 回