Interdiffusion in copper–aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation
作者:
H. T. G. Hentzell,
R. D. Thompson,
K. N. Tu,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 12
页码: 6923-6928
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.331999
出版商: AIP
数据来源: AIP
摘要:
Interdiffusion in Cu–Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing‐incidence x‐ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with &thgr;‐CuAl2forming first, followed by &eegr;2‐CuAl, and &ggr;2‐Cu9Al4. In samples with excess Al, the &thgr;‐CuAl2is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of &thgr;‐CuAl2can be described by a prefactor of 7.4 cm2/s and an activation energy of 1.31 eV.
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