Crack-free PZT thin films micropatterned on silicon substrate for integrated circuits
作者:
Motoo Toyama,
Naoto Inoue,
Masanori Okuyama,
Yoshihiro Hamakawa,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1992)
卷期:
Volume 2,
issue 1-4
页码: 147-155
ISSN:1058-4587
年代: 1992
DOI:10.1080/10584589208215739
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Process for getting crack-free lead zirconate titanate (PZT) thin films micropatterned on Si substrate is demonstrated. The PZT film was deposited at temperatures below 300°C by magnetron sputtering using a ceramic target, and then etched before annealing. After annealed above 500°C to get perovskite phase, the PZT films shows no crack, while PZT films, not patterned, has cracks. This result can be explained as dissipation of stress energy by reduction of the lateral size of the film. The effects of processing parameters of reactive sputtering and annealing on the morphology of the PZT thin films are presented. Photo-assist etching of the PZT thin films using KrF laser is described, too.
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