The conditions of evaporation and condensation of thin layers of arsenous sulfide (As2S3) are described. The difference in the selective dissolution of the illuminated and nonilluminated areas found reveals a possibility for the successful application of As2S3as an evaporated photoresist for microphotolithographic purposes. In this connection the influence of the condensation rate (Vc) and evaporation temperature (tevp) on the selective dissolution is studied. It is shown that the selective dissolution is negligibly influenced by the condensation rate but strongly affected by the temperature of As2S3evaporation.