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Reactive ion etching of GaAs using CCl2F2and the effect of Ar addition

 

作者: J. Chaplart,   B. Fay,   Nuyen T. Linh,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 4  

页码: 1050-1052

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582673

 

出版商: American Vacuum Society

 

关键词: ion beams;etching;gallium arsenides;gas flow;rf systems;power;argon additions;carbon fluorides;chlorine fluorides;chloride volatility process;inhibition;schottky barrier diodes;fabrication

 

数据来源: AIP

 

摘要:

GaAs etching rate performed by RIE in CCl2F2gas has been shown to depend on many parameters: pressure, rf power and flow rate. Moreover addition of Ar in CCl2F2has been found to increase the etch rate. This observation and the AES study of etched GaAs surfaces has led to the conclusion that volatile chloride species contribute to the etching mechanism, while fluoride species which are less volatile inhibit etching. Schottky diodes presenting an ideality factor of 1.02 have been fabricated on CCl2F2etched GaAs surface.

 

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