Influence of mechanical stress on light-induced creation of defects in hydrogenated amorphous silicon
作者:
A. Ghaith,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1987)
卷期:
Volume 55,
issue 4
页码: 197-200
ISSN:0950-0839
年代: 1987
DOI:10.1080/09500838708207556
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The effect of mechanical stress on light-induced changes in photoconductivity has been studied in films of plasma-deposited hydrogenated amorphous silicon on different substrates. The experimental results reveal no correlation between the degradation of the photoconductivity and the mechanical stress in these films. These findings contradict the observations of Stutzmann but agree with those of Guha, den Boer, Agarwal and Hack.
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