Channels of Cd diffusion and stoichiometry in CdTe grown by molecular beam epitaxy
作者:
A. Barcz,
G. Karczewski,
T. Wojtowicz,
M. Sadlo,
J. Kossut,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 2
页码: 206-208
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120686
出版商: AIP
数据来源: AIP
摘要:
By studying the diffusion of specially incorporated thin Mn markers in molecular beam epitaxy-grown CdTe, we can investigate quantitatively deviations from stoichiometry as well as the details of Cd diffusion in the crystal. In CdTe layers deficient in Cd, the diffusion proceeds throughVCdvacancies, with the activation energy of 2.1 eV, characteristic for bulk CdTe. In CdTe grown in excess Cd flux, the evaluated activation energy of 1.4 eV for Cd self-diffusion is characteristic to Te self-diffusion in bulk CdTe, which implies that the flow of Cd atoms is mediated byVTevacancies with formation of a virtualCdTeantisite defect. A striking correlation of the occurrence of the minimum of electrical resistivity in In-doped CdTe with nearly perfect stoichiometry with the minimum of the diffusivity of Mn provides further support of this interpretation. ©1998 American Institute of Physics.
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