Disilicide of rare‐earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on bothn‐ andp‐type silicons at around 350 °C for Schottky‐barrier height measurement usingI‐Vtechnique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky‐barrier heights of about 0.4 eV onn‐Si and 0.7 eV onp‐Si were determined.