Removing native oxide from Si(001) surfaces using photoexcited fluorine gas
作者:
Takayuki Aoyama,
Tatsuya Yamazaki,
Takashi Ito,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2576-2578
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105930
出版商: AIP
数据来源: AIP
摘要:
This letter discusses the reaction between (001) oriented Si surfaces and photoexcited fluorine gas resulting in the removal of the native Si oxide. For an F2/Ar gas system, the bulk Si was etched in areas where the native Si oxide had been completely removed. However, by using an F2/H2gas system, only the native Si oxide was removed. We used this method to remove the native Si oxide in Si epitaxial growth. A high‐quality single‐crystal Si film surface was obtained up to a maximum temperature of 600 °C through this Si growth process. We also characterized the etching of a thermal oxide, silicon nitride, and silicon carbide.
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