Improvement of loss factortanδ of PZT PbTi0.75Zr0.25O3films by O+-Ion-implantation
作者:
C.E. Zybill,
E. Hechtl,
D. Kovalev,
W. Eckstein,
期刊:
Integrated Ferroelectrics
(Taylor Available online 2000)
卷期:
Volume 29,
issue 3-4
页码: 283-290
ISSN:1058-4587
年代: 2000
DOI:10.1080/10584580008222245
出版商: Taylor & Francis Group
关键词: Keywords: Ion-implantation; PZT; loss factor tan δ luminescence
数据来源: Taylor
摘要:
Ion implantation into (111) PZT films was done with 150 keV O+-ions using the following doses: 5 · 1010cm−2and 5 · 1013cm−2. The penetration depth of the O+-ion beam (through a 150 nm top Pt-electrode) was calculated with the TRIM. SP program version TRVMC95. For 104particles, 22% of them were calculated to pass the top Pt electrode, 1% of the 104particles were calculated to reach a penetration depth of 150 nm in PZT. The O+-implantation led to a significant improvement (50%) of loss factortanδ. This effect is ascribed within current theory to a decrease of oxygen vacancies (defects). Oxygen vacancies are supposed to be associated by Ti3+, Ti2+and Ti+centers in the perovskite lattice. Evidence for a possible participation of such reduced (charged) titanium defects was obtained by luminescence spectroscopy. Therefore, PZT samples were treated with H2to increase the concentration of reduced Tin+(n<4) ions in the perovskite lattice by chemical treatment. The luminescence spectrum of such reduced samples showed peaks at 3.2, 2.95 and 2.8 eV (surface Ti3+, Ti2+Ti+centers). Furthermore, peaks at 1.87eV and 2.2 eV were observed. These near-midgap states have been ascribed to transitions from Ti3+and Ti2+from the bulk of PZT (3.8 eV excitation energy, T = 6K). Finally, a sharp luminescence peak at 3.34 eV (6K) is assigned as self-trapped exciton luminescence.
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