The electron multiplication factors of electron bombardment induced conductivity (EBIC) of 300–500 were obtained with a hydrogenated amorphous silicon (a‐Si:H) film of higher resistivity than 1010&OHgr; cm at an accelerating voltage of 7 kV. The response time of the EBIC current for a pulsed primary electron beam was determined to be shorter than 1 ms for both build‐up and decay lags. It is found that an EBIC target of ana‐Si:H film has promising properties for application to imaging devices at low light levels.