Study of saturation conduction in short-channel MOS transistors by numerical simulation
作者:
K.Y.Tong,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 4
页码: 173-176
年代: 1985
DOI:10.1049/ip-i-1.1985.0037
出版商: IEE
数据来源: IET
摘要:
The potential and current density distribution in a short-channel MOS transistor in saturation has been studied in detail by numerical simulation. The pushing effect of carriers from the surface in the draincontrolled region is discussed by introducing a field depth parameter. The pinch-off condition of the channel is examined: at gate voltages below a transition voltageVtr, the length of the pinch-off region is determined by the pushing of carriers away from the surface; whereas at higher gate voltages, it is determined by the velocity saturation of carriers. An analytical formula for the length of the pinch-off region at gate voltages belowVtris derived based on simulation results.
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