Dynamic behavior of mode‐locked Nd : YAG laser annealing in ion‐implanted Si, GaAs, and GaP
作者:
Kouichi Murakami,
Kenji Gamo,
Susumu Namba,
Mitsuo Kawabe,
Yoshinobu Aoyagi,
期刊:
Applied Physics Letters
(AIP Available online 1979)
卷期:
Volume 35,
issue 8
页码: 628-630
ISSN:0003-6951
年代: 1979
DOI:10.1063/1.91231
出版商: AIP
数据来源: AIP
摘要:
By measuring the time‐dependent optical reflectivity, we have investigated the dynamic behavior of annealing with the 30‐psec pulse train of a mode‐locked Nd : YAG laser. It was first observed that at narrow ranges of high laser energy density, the reflectivity of implanted Si and GaAs increases slowly to the level consistent with liquid ones, except GaP, and remains at that level for a period less than 200 nsec. As to Si, the mode‐locked laser is confirmed to have a weak effect on temperature rise and, therefore, to produce a thin molten layer compared toQ‐switched Nd : YAG lasers.
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