After implantation of ytterbium (Yb) in InP, GaP, and GaAs and subsequent annealing, we observed sharply structured photoluminescence bands at around 1.00 &mgr;m (1.24 eV). These emissions are assigned to the internal 4f‐4ftransitions2F5/2→2F7/2of Yb3+(4f13). Isochronal annealing studies and variations of the implantation dosages for Yb in InP were performed to optimize the luminescence efficiency and to decide whether there are different Yb centers responsible for the luminescence bands. It is shown that the dominant luminescence band arises from a cubic Yb3+center which resides substitutionally on a cation site (In or Ga). Zeeman measurements and photoluminescence excitation spectroscopy further support this interpretation. The influence of electron irradiation on the luminescence efficiency of InP:Yb has been investigated. It is found that the Yb3+luminescence intensity is only weakly affected, while the near band‐edge emission is strongly quenched.