Metastable carrier concentration in GaAs/GaAlAs heterostructure under hydrostatic pressure
作者:
T. Suski,
E. Litwin‐Staszewska,
P. Wis´niewski,
L. Dmowski,
W. H. Zhuang,
G. B. Liang,
D. Z. Sun,
Y. P. Zhen,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 7
页码: 2307-2310
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341134
出版商: AIP
数据来源: AIP
摘要:
Different aspects of the metastable character of Si‐related localized states in modulation‐doped heterostructures of GaAs/GaAlAs have been studied. Hydrostatic pressure was used to change the two‐dimensional electron‐gas concentration at the active interface of the system. The performed studies give evidence that below a critical temperature ofTc=135 K for a given sample, at the same temperature and pressure conditions, an arbitrary carrier concentration in the quantum well can be obtained depending on the pressure at which the sample was cooled.
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