首页   按字顺浏览 期刊浏览 卷期浏览 Optical losses in O+and B+implanted GaAs for stripe laser
Optical losses in O+and B+implanted GaAs for stripe laser

 

作者: D.Moutonnet,  

 

期刊: IEE Journal on Solid-State and Electron Devices  (IET Available online 1977)
卷期: Volume 1, issue 5  

页码: 163-164

 

年代: 1977

 

DOI:10.1049/ij-ssed.1977.0025

 

出版商: IEE

 

数据来源: IET

 

摘要:

Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.

 

点击下载:  PDF (202KB)



返 回