Optical losses in O+and B+implanted GaAs for stripe laser
作者:
D.Moutonnet,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1977)
卷期:
Volume 1,
issue 5
页码: 163-164
年代: 1977
DOI:10.1049/ij-ssed.1977.0025
出版商: IEE
数据来源: IET
摘要:
Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.
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