Absorption ofn‐type Ge, Si quantum wells for normal incident radiation
作者:
Wenlan Xu,
S. C. Shen,
Y. Fu,
M. Willander,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 8
页码: 5183-5185
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359754
出版商: AIP
数据来源: AIP
摘要:
The theory of electron intersubband infrared absorptions forn‐type Si/GeSi and Ge/GeSi quantum wells in the waveguide structure is presented in order to compare with recently obtained experimental results. The absorption coefficient as a function of the polarization angle of incident light has been investigated by considering the degeneracies and the occupancies of the different valleys for conduction band. ©1995 American Institute of Physics.
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