Characterization of resonant tunneling paths in current–voltage characteristics line shapes
作者:
P. H. Rivera,
P. A. Schulz,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 18
页码: 2675-2677
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114289
出版商: AIP
数据来源: AIP
摘要:
We analyze the current density‐voltage characteristics of double‐barrier tunneling diodes, with different spacer layers, within the framework of a Poisson solver together with a coherent tunneling approximation for transmission probabilities. We show that varying the spacer layer thickness, together with barrier heights, changes dramatically the current density‐voltage characteristics line shape, which is revealed to be an important qualitative signature of the tunneling paths involved in the double‐barrier diodes under operation. ©1995 American Institute of Physics.
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