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Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process

 

作者: D.Remiens,   V.Hornung,   B.Rose,   D.Robein,  

 

期刊: IEE Proceedings J (Optoelectronics)  （IET Available online 1991）
卷期: Volume 138, issue 1  

页码: 57-59

 

年代: 1991

 

DOI:10.1049/ip-j.1991.0009

 

出版商: IEE

 

数据来源: IET

 

摘要:

Monolithic integration between an active and a passive waveguide directly butt-jointed in a single step of MOCVD is demonstrated at 1.5 μm. Buried ridge stripe (BRS) structures, consisting of a 250 μm long active region and a 1300 μm long passive waveguide, exhibit 25 mA threshold current, 60% coupling coefficient and an optical output power in excess of 5 mW.

 

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