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Measurement of atomic indium during metalorganic chemical vapor deposition

 

作者: G. A. Hebner,   K. P. Killeen,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 3  

页码: 1598-1600

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345644

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Atomic indium, produced by the pyrolysis of trimethylindium (TMIn) during metalorganic chemical vapor deposition, has been directly observed using resonant fluorescence spectroscopy. The indium fluorescence signal is linear with TMIn flow rate at a susceptor temperature of 500 °C above a small background threshold level. The threshold for the observation of an indium signal is 325 °C. Addition of trimethylantimony (TMSb) at concentrations less than those required for normal InSb epitaxial growth results in quenching of the indium signal.

 

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