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Study of triple-junction amorphous silicon alloy solar cells

 

作者: Xunming Deng,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1999)
卷期: Volume 462, issue 1  

页码: 297-302

 

ISSN:0094-243X

 

年代: 1999

 

DOI:10.1063/1.57905

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this paper, we report the recent progress in our newly established amorphous silicon (a-Si) based photovoltaic research program at The University of Toledo (UT). Under the Thin Film Partnership subcontract which started in March 1998, we have achieved the fabrication of 1) wide bandgap a-Si solar cells with 1.02 V open circuit voltage using high hydrogen dilution for the i-layer deposition, 2) mid bandgap a-Si solar cells having a high fill factor of 0.732, 3) narrow bandgap a-SiGe solar cells with 8.3&percent; initial efficiency and a red response of nearly 50&percent; at 800 nm, and 4) triple-junction, spectrum-splitting a-Si/a-SiGe/a-SiGe solar cells with 9.7&percent; initial efficiency. ©1999 American Institute of Physics.

 

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