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Gettering of gold by rapid thermal processing

 

作者: B. Hartiti,   Vu‐Thuong‐Quat,   W. Eichhammer,   J.‐C. Muller,   P. Siffert,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 9  

页码: 873-875

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101626

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on the first direct evidence of a gettering effect induced by rapid thermal processing (RTP). Homogeneously gold‐doped silicon is studied before and after RTP by deep level transient spectroscopy measurements of the Au acceptor level. After a 1000 °C/10 s cycle, gold is depleted in three regions below the surfaces, indicating a gettering effect. The mechanism for this RTP‐induced gettering is discussed.

 

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