Simultaneous diffusion of ion‐predeposited arsenic and boron in silicon
作者:
Helmut Heinrich,
L. Hastings,
J. Rozenbergs,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 10
页码: 4670-4671
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663115
出版商: AIP
数据来源: AIP
摘要:
As and B were implanted inton‐type Si at 40 keV. The shallow layer was used as a source for simultaneous diffusion and formation of an‐p‐nstructure. The diffusion coefficients obtained were the same as those for the diffusion of the individual dopants. It is suggested that this technique may be of interest for the formation of complex profiles which are too deep to be obtained by implantation alone.
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