This article investigates the merits of molybdenum (Mo) silicide formation on gated polycrystalline silicon (poly-Si) field emitters. Metal silicides are promising materials for field emission cathode due to their high electrical and thermal conductivity and high-temperature stability. In our experiment, Mo silicide was produced by direct metallurgical reaction, that is, deposition of Mo and subsequent rapid thermal annealing. The surface morphologies and field emission properties of Mo-silicided poly-Si (Mo-polycide) emitters have been examined and compared with those of pure poly-Si emitters. Field emission from these Mo-polycide emitters exhibited significant enhancement compared with pure poly-Si emitters in both total emission current and stability. The reason for this improved electron emission efficiency and stability could be explained by the smaller work function and better surface inertness of Mo-polycide emitters than those of poly-Si emitters.