首页   按字顺浏览 期刊浏览 卷期浏览 Erratum: An investigation of the properties of cubic GaN grown on GaAs by plasma‐assist...
Erratum: An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy [J. Vac. Sci. Technol. B9, 1924 (1991)]

 

作者: S. Strite,   J. Ruan,   Z. Li,   N. Manning,   A. Salvador,   H. Chen,   David J. Smith,   W. J. Choyke,   H. Morkoç,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1992)
卷期: Volume 10, issue 1  

页码: 187-187

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586297

 

出版商: American Vacuum Society

 

数据来源: AIP

 

 

点击下载:  PDF (52KB)



返 回