Development-free vapor laser photolithography with 0.4 μm resolution
作者:
Xiaoyin Hong,
Jianping Lu,
Yongyuan Yang,
Liming Dai,
Albert W. Mau,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 3
页码: 724-728
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589376
出版商: American Vacuum Society
关键词: polymers;SiO2
数据来源: AIP
摘要:
We investigated an all-dry etching process of the development-free vapor photolithography (DFVP) with a 351 nm XeF excimer laser. After masked exposure,SiO2on a silicon wafer and under a microlithographically exposed photoaccelerator polymer film can be directly etched by a vapor containing a mixture of HF, water, andN2. Patterns with 0.4 μm resolution were obtained. In this article, effects of the etching temperature and time, exposure energy, and the concentration of 5-nitroacenaphthene in polymer on the resolution, as well as the mechanism of DFVP, are discussed.
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